A novel depleted semi-insulating silicon material for high frequency applications
Paper i proceeding, 2002

Wafer bonding has been used to manufacture a silicon material intended as substrate for high frequency applications. The space charge regions surrounding the bonded silicon/silicon interface deplete the silicon thereby causing semiinsulating behaviour at high frequencies. The material has been characterized electrically for frequencies up to 40 GHz using metal transmission lines and crosstalk structures on its surface. Measurements on the depleted silicon/silicon structures has been compared to similar measurements on bulk silicon wafers of different resistivities, SIMOX wafers and quartz. The results show that the material has potential to be used at high frequencies

wafer bonding

semiconductor thin films

bonds (chemical)

surface conductivity

interface structure

elemental semiconductors

space charge

semiconductor process modelling

quartz

SIMOX

electrical resistivity

silicon

Författare

Mikael Johansson

Institutionen för mikroelektronik

Stefan Bengtsson

Institutionen för mikroelektronik

Progress in SOI Structures and Devices Operating at Extreme Conditions. Proceedings of the NATO Advanced Research Workshop

333-

Ämneskategorier

Annan elektroteknik och elektronik