Characterization of thin SOI layers
Paper i proceeding, 1995

Silicon-on-insulator materials still suffer from imperfect electrical and crystalline quality and a spread in performance is observed. Viable characterization techniques are necessary to advance the quality of the materials. This paper gives an overview of characterization methods for silicon-on-insulator materials. Different techniques, both destructive and nondestructive, for determination of silicon and silicon dioxide film thicknesses, structural defects and impurities are reviewed. The potentials and limits of different techniques for silicon-on-insulator material characterization are discussed and some examples of results are given primarily for silicon-on-insulator materials formed by wafer bonding

materials testing

wafer bonding

crystal defects

integrated circuit technology

quality control

silicon-on-insulator

inspection

impurity distribution

Författare

Stefan Bengtsson

Institutionen för fasta tillståndets elektronik

Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications

221-

Ämneskategorier

Annan elektroteknik och elektronik