Evaluation of silicon device processes aimed for silicon-on-diamond material
Paper i proceeding, 1995

Silicon-on-Diamond (SOD) is a candidate for the next generation of SOI materials, especially for applications requiring high heat spreading capability. Undoped diamond is a highly electrically insulating material at temperatures below 600 K. Resistivities above 1013 Ωcm (at 10 V) and breakdown fields above 107 V/cm have been reported. Diamond conducts heat about 10 times better than silicon and more than 1000 times better than silicon dioxide. In this paper, necessary process modifications for successful manufacturing of devices on SOD-materials are discussed and evaluated

semiconductor technology

diamond

silicon-on-insulator

Författare

Anders Soderbarg

Bengt Edholm

Stefan Bengtsson

Institutionen för fasta tillståndets elektronik

1995 IEEE International SOI Conference Proceedings

104-

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/SOI.1995.526482