Evaluation of silicon device processes aimed for silicon-on-diamond material

Paper i proceeding, 1995

Silicon-on-Diamond (SOD) is a candidate for the next generation of SOI materials, especially for applications requiring high heat spreading capability. Undoped diamond is a highly electrically insulating material at temperatures below 600 K. Resistivities above 1013 Ωcm (at 10 V) and breakdown fields above 107 V/cm have been reported. Diamond conducts heat about 10 times better than silicon and more than 1000 times better than silicon dioxide. In this paper, necessary process modifications for successful manufacturing of devices on SOD-materials are discussed and evaluated