A silicon-oxide-silicon nanogap device structure
Paper i proceeding, 2002
Nanogaps in the range 5-14 nm have been manufactured with a silicon-oxide-silicon structure and the electrical characteristics show low parasitic leakage currents and a high sensitivity to surface treatment
silicon
elemental semiconductors
interface states
semiconductor-insulator-semiconductor devices
leakage currents
energy gap
nanoelectronics
silicon compounds
Författare
Per Lundgren
Institutionen för mikroelektronik
Stefan Bengtsson
Institutionen för mikroelektronik
Proceedings of the 2002 2nd IEEE Conference on Nanotechnology (Cat. No.02TH8630)
201-
Ämneskategorier
Annan elektroteknik och elektronik
DOI
10.1109/NANO.2002.1032225