A silicon-oxide-silicon nanogap device structure
Paper i proceeding, 2002

Nanogaps in the range 5-14 nm have been manufactured with a silicon-oxide-silicon structure and the electrical characteristics show low parasitic leakage currents and a high sensitivity to surface treatment

silicon

elemental semiconductors

interface states

semiconductor-insulator-semiconductor devices

leakage currents

energy gap

nanoelectronics

silicon compounds

Författare

Per Lundgren

Institutionen för mikroelektronik

Stefan Bengtsson

Institutionen för mikroelektronik

Proceedings of the 2002 2nd IEEE Conference on Nanotechnology (Cat. No.02TH8630)

201-

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/NANO.2002.1032225