A silicon-oxide-silicon nanogap device structure
Paper in proceeding, 2002
Nanogaps in the range 5-14 nm have been manufactured with a silicon-oxide-silicon structure and the electrical characteristics show low parasitic leakage currents and a high sensitivity to surface treatment
silicon
elemental semiconductors
interface states
semiconductor-insulator-semiconductor devices
leakage currents
energy gap
nanoelectronics
silicon compounds
Author
Per Lundgren
Department of Microelectronics
Stefan Bengtsson
Department of Microelectronics
Proceedings of the 2002 2nd IEEE Conference on Nanotechnology (Cat. No.02TH8630)
201-
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/NANO.2002.1032225