A silicon-oxide-silicon nanogap device structure
Paper in proceedings, 2002

Nanogaps in the range 5-14 nm have been manufactured with a silicon-oxide-silicon structure and the electrical characteristics show low parasitic leakage currents and a high sensitivity to surface treatment

silicon

elemental semiconductors

interface states

semiconductor-insulator-semiconductor devices

leakage currents

energy gap

nanoelectronics

silicon compounds

Author

Per Lundgren

Department of Microelectronics

Stefan Bengtsson

Department of Microelectronics

Proceedings of the 2002 2nd IEEE Conference on Nanotechnology (Cat. No.02TH8630)

201-

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/NANO.2002.1032225

More information

Created

10/8/2017