Bonded Al2O3-covered Si-wafers for highly thermally conductive SOI-materials
Paper i proceeding, 1998

Aluminum oxide films deposited by low temperature atomic layer epitaxy were studied as an alternative to the commonly used silicon dioxide buried insulator of bonded silicon on insulator wafers. Successful room temperature bonding was performed between bare hydrophilic silicon wafers and silicon wafers covered with aluminum oxide. The surface energy after room temperature bonding was 50 mJ/m2, and after an anneal at 330°C, it had increased to 600 mJ/m2. After annealing at 500°C, the silicon wafers fractured upon insertion of a 50 μm blade. Higher temperatures than 500°C resulted in wafer separation, probably due to film densification and associated tensile stress. Leakage currents through the aluminum oxide films and breakdown electric fields were satisfactory for the intended application after a post-deposition anneal

surface energy


wafer bonding

buried layers

aluminium compounds



atomic layer epitaxial growth


electric breakdown

internal stresses

dielectric thin films

thermal conductivity

leakage currents


Per Ericsson

Institutionen för fasta tillståndets elektronik

Stefan Bengtsson

Institutionen för fasta tillståndets elektronik

Jarmo Skarp

T. Kanniainen

Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications



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