Properties of Al2O3-films deposited on silicon by atomic layer epitaxy

Per Ericsson; Stefan Bengtsson; Jarmo Skarp

doi:10.1016/S0167-9317(97)00022-1

Properties of Al2O3-films deposited on silicon by atomic layer epitaxy
Journal article, 1997

Author

Per Ericsson

Department of Solid State Electronics

Stefan Bengtsson

Department of Solid State Electronics

Other publications Research

Jarmo Skarp

Microelectronic Engineering

Vol. 36 1-4 91-94

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1016/S0167-9317(97)00022-1

Publication data connected to DOI

More information

Created

10/8/2017

If you have questions, need help, find a bug or just want to give us feedback you may use this form, or contact us per e-mail research.lib@chalmers.se.

Message

Your email address

Research.chalmers.se contains research information from Chalmers University of Technology, Sweden. It includes information on projects, publications, research funders and collaborations.

More about coverage period and what is publicly available

Privacy and cookies

Accessibility

Citation Style Language
citeproc-js (Frank Bennett)

Chalmers Library

Chalmers Research

Chalmers Student Theses

SE-412 96 GOTHENBURG, SWEDEN
PHONE: +46 (0)31-772 10 00
WWW.CHALMERS.SE

Properties of Al2O3-films deposited on silicon by atomic layer epitaxy Journal article, 1997