Selective growth of individual multiwalled carbon nanotubes
Journal article, 2004

Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time.

Plasma-enhanced chemical vapour deposition

Multiwalled carbon nanotubes

Controlled individual growth

PECVD

Author

Raluca Elena Morjan

Chalmers, Department of Experimental Physics, Atomic Physics

Mohammad Kabir

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

SangWook Lee

University of Gothenburg

Oleg Nerushev

University of Gothenburg

Per Lundgren

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

Stefan Bengtsson

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

YungWoo Park

Seoul National University

Eleanor E B Campbell

University of Gothenburg

Current Applied Physics

1567-1739 (ISSN)

Vol. 4 6 591-594

Subject Categories

Physical Sciences

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1016/j.cap.2004.01.025

More information

Created

10/8/2017