Selective growth of individual multiwalled carbon nanotubes
Journal article, 2004
Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time.
Plasma-enhanced chemical vapour deposition
Multiwalled carbon nanotubes
Controlled individual growth
PECVD
Author
Raluca Elena Morjan
Chalmers, Department of Experimental Physics, Atomic Physics
Mohammad Kabir
Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics
SangWook Lee
University of Gothenburg
Oleg Nerushev
University of Gothenburg
Per Lundgren
Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics
Stefan Bengtsson
Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics
YungWoo Park
Seoul National University
Eleanor E B Campbell
University of Gothenburg
Current Applied Physics
1567-1739 (ISSN)
Vol. 4 6 591-594Subject Categories
Physical Sciences
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1016/j.cap.2004.01.025