ZrO2 and ZrO2/Y2O3 gate dielectrics prepared by evaporation and annealing processes
Paper in proceeding, 2002
The electrical characteristics of MOS capacitors with ZrO2 gate dielectric prepared by e-beam evaporation of Zr or Yttrium Stabilized Zirconia (YSZ) and subsequent thermal treatment are reported. With this method dielectrics corresponding to an equivalent oxide thickness (EOT) of 1.9 nm and a relative dielectric constant of approximately 15 have been prepared. The effect of annealing on Zr incorporation into the Si substrate is investigated SIMS analysis showed no signs of Zr diffusion in the substrate at temperatures as high as 900°C and that significant diffusion from the dielectric layer occur only at 1100°C
mass spectroscopic chemical analysis
secondary ion mass spectra
electron beam deposition
yttrium compounds
MOS capacitors
zirconium compounds
annealing
permittivity
diffusion
Author
Mikael Johansson
Department of Microelectronics
M. Y. A. Yousif
Department of Microelectronics
Alok Sareen
Department of Microelectronics
Per Lundgren
Department of Microelectronics
Stefan Bengtsson
Department of Microelectronics
Ulf Södervall
Department of Physics
ASDAM '02. Conference Proceedings. Fourth International Conference on Advanced Semiconductor Devices and Microsystems
279-
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/ASDAM.2002.1088524