ZrO2 and ZrO2/Y2O3 gate dielectrics prepared by evaporation and annealing processes
Paper in proceeding, 2002
mass spectroscopic chemical analysis
secondary ion mass spectra
electron beam deposition
yttrium compounds
MOS capacitors
zirconium compounds
annealing
permittivity
diffusion
Author
Mikael Johansson
Department of Microelectronics
M. Y. A. Yousif
Department of Microelectronics
Alok Sareen
Department of Microelectronics
Per Lundgren
Department of Microelectronics
Stefan Bengtsson
Department of Microelectronics
Ulf Södervall
Department of Physics
ASDAM '02. Conference Proceedings. Fourth International Conference on Advanced Semiconductor Devices and Microsystems
279-
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/ASDAM.2002.1088524