Low temperature oxides deposited by remote plasma enhanced CVD
Journal article, 1994

A remote plasma enhanced chemical vapor deposition (RPECVD) process was used to prepare SiO2-Si structures at ~300°C. The best midgap interface trap densities, Ditm, as obtained by C-V techniques are 6-8×1010 cm-2eV-1 for SiO2-Si(100) and 2-3×1011 cm-2eV-1 for SiO2-Si(111)

integrated circuit technology


interface states

plasma CVD


dielectric thin films

silicon compounds

electron traps

hole traps

elemental semiconductors


Lars-Åke Ragnarsson

Department of Solid State Electronics

Stefan Bengtsson

Department of Solid State Electronics

Mats O. Andersson

Department of Solid State Electronics

Ulf Södervall

Department of Physics

Proceedings of the Second International Symposium on Ultra-Clean Processing of Silicon Surfaces (UCPSS '94)


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Other Electrical Engineering, Electronic Engineering, Information Engineering

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