Can molecular resonant tunneling diodes be used for local refresh of DRAM memory cells?
Journal article, 2000

Negative differential resistance

molecular electronics

resonant tunnelling diodes

low power DRAM memory cells

Author

Jonas Berg

Department of Microelectronics, Solid State Electronics

Per Lundgren

Department of Microelectronics, Solid State Electronics

Stefan Bengtsson

Department of Microelectronics, Solid State Electronics

Solid-State Electronics

0038-1101 (ISSN)

Vol. 44 12 2247-2252

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1016/S0038-1101(00)00204-5

More information

Created

10/6/2017