Optimized cleaning processes for silicon wafer bonding
Paper in proceedings, 1996

The use of SPFM (H2SO4-H2O2-HF) at low HF concentrations (10-1000 ppm) has been investigated as a pre-cleaning procedure for silicon direct bonding. This cleaning procedure can be tuned to simultaneously give hydrophilic surface properties, ensuring good bondability, and excellent electric properties, crucial for the application of direct bonding in device applications

integrated circuit reliability

integrated circuit measurement

surface contamination

integrated circuit testing

optimisation

silicon

wafer bonding

elemental semiconductors

surface cleaning

integrated circuit yield

Author

Karin Ljungberg

Stefan Bengtsson

Department of Solid State Electronics

Proceedings of the Third International Symposium on Ultra Clean Processing of Silicon Surfaces. UCPSS '96

123-

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/7/2017