Hydrophobic low temperature wafer bonding; void formation in the oxide free interface
Paper in proceedings, 2003

The objective is to investigate plasma assisted bonding processes having the potential of forming oxide-free bonded interfaces. Spontaneous low temperature hydrophobic bonding was achieved using a plasma-assisted technique. High surface energy was obtained when bonding two silicon wafers after argon plasma treatment and a subsequent dip in concentrated HF. In contrast hydrogen plasma caused bonding problems while a mix of hydrogen and nitrogen improved the bondability. A particular interest is directed toward the generation of voids as a consequence of storage at room temperature or low temperature annealing. All samples suffer from void generation both after storage at room temperature and after low temperature annealing.

Annealing

Hydrophobicity

Bonding

Interfaces (materials)

Interfacial energy

Plasma applications

Silicon wafers

Hydrofluoric acid

Author

Petra Amirfeiz

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

Anke Sanz-Velasco

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

Stefan Bengtsson

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

Proc. of the 7th Int. Symp. on Semiconductor Wafer Bonding

Vol. 19 267-

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/7/2017