Ultra-clean Si/Si interface formation by surface preparation and direct bonding in ultra-high vacuum
Paper in proceeding, 1998

Silicon surfaces have been cleaned and bonded in ultra-high vacuum at a pressure in the 10-10 torr range. The bonded interfaces show extremely low contamination levels as measured by secondary ion mass spectroscopy. Nevertheless, a potential barrier could be detected at the interface spreading resistance and current vs. temperature measurements. This suggests that the barrier is caused by inevitable dislocation networks due to wafer misorientation, as well as residual oxygen at the interface

wafer bonding

dislocations

electric current

surface contamination

secondary ion mass spectra

vacuum techniques

surface cleaning

silicon

interface structure

mass spectroscopic chemical analysis

electric resistance

elemental semiconductors

Author

Karin Hermansson

Francois Grey

Stefan Bengtsson

Department of Solid State Electronics

Other publications Research

Ulf Södervall

Department of Physics

Other publications Research

Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications

401-

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/7/2017

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