Low capacitance HTS junctions for single electron transistors
Paper in proceedings, 2009

We have fabricated and characterized YBa2Cu3O7-δ grain boundary junctions to determine their feasibility as tunnel barriers in single electron transistors. Superconducting quantum interference devices with injection lines have been used to measure the junctions capacitance. We have extracted capacitance values which allow us to achieve a Coulomb blockade regime for sufficiently small junction dimensions.

SQUID

Grain boundary junction

High critical temperature superconductor

Author

David Gustafsson

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Thilo Bauch

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Shahid Nawaz

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Mudassar Mumtaz Virk

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Giorgio Signorello

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Floriana Lombardi

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Physica C: Superconductivity and its Applications

0921-4534 (ISSN)

Vol. 470 S188-S190

Subject Categories

Condensed Matter Physics

DOI

10.1016/j.physc.2009.11.040