Low capacitance HTS junctions for single electron transistors
Paper i proceeding, 2009

We have fabricated and characterized YBa2Cu3O7-δ grain boundary junctions to determine their feasibility as tunnel barriers in single electron transistors. Superconducting quantum interference devices with injection lines have been used to measure the junctions capacitance. We have extracted capacitance values which allow us to achieve a Coulomb blockade regime for sufficiently small junction dimensions.

SQUID

Grain boundary junction

High critical temperature superconductor

Författare

David Gustafsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Thilo Bauch

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Shahid Nawaz

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Mudassar Mumtaz Virk

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Giorgio Signorello

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Floriana Lombardi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Physica C: Superconductivity and its Applications

0921-4534 (ISSN)

Vol. 470 SUPPL.1 S188-S190

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1016/j.physc.2009.11.040