Silicon substrate integration of BST based tunable TFBARs using all-dielectric SiO2/AlN Bragg reflectors
Paper in proceeding, 2010
Integration possibilities of BaxSr1-xTiO3 (BST) based tunable Thin Film Bulk Acoustic Wave Resonators (TFBAR) using all-dielectric SiO2/AlN Bragg reflectors deposited on a high resistivity silicon substrate are considered. SiO2/AlN reflectors withstand the high deposition temperature (>600C) of the BST films opening up possibilities for heterogeneous integration of complex microwave circuits. © 2010 IEEE.
Si-integration
TFBAR
Induced piezoelectric effect
FBAR
Acoustic Bragg reflector ferroelectric
Author
Andrei Vorobiev
Chalmers, Applied Physics, Physical Electronics
John Berge
Chalmers, Applied Physics, Physical Electronics
Martin Norling
Chalmers, Applied Physics, Physical Electronics
Spartak Gevorgian
Chalmers, Applied Physics, Physical Electronics
2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers
41-44
978-142445458-7 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/SMIC.2010.5422942
ISBN
978-142445458-7