Silicon substrate integration of BST based tunable TFBARs using all-dielectric SiO2/AlN Bragg reflectors
Paper i proceeding, 2010

Integration possibilities of BaxSr1-xTiO3 (BST) based tunable Thin Film Bulk Acoustic Wave Resonators (TFBAR) using all-dielectric SiO2/AlN Bragg reflectors deposited on a high resistivity silicon substrate are considered. SiO2/AlN reflectors withstand the high deposition temperature (>600C) of the BST films opening up possibilities for heterogeneous integration of complex microwave circuits. © 2010 IEEE.

Si-integration

TFBAR

Induced piezoelectric effect

FBAR

Acoustic Bragg reflector ferroelectric

Författare

Andrei Vorobiev

Chalmers, Teknisk fysik, Fysikalisk elektronik

John Berge

Chalmers, Teknisk fysik, Fysikalisk elektronik

Martin Norling

Chalmers, Teknisk fysik, Fysikalisk elektronik

Spartak Gevorgian

Chalmers, Teknisk fysik, Fysikalisk elektronik

2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers

41-44

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/SMIC.2010.5422942

ISBN

978-142445458-7