Silicon substrate integration of BST based tunable TFBARs using all-dielectric SiO2/AlN Bragg reflectors
Paper i proceeding, 2010
Integration possibilities of BaxSr1-xTiO3 (BST) based tunable Thin Film Bulk Acoustic Wave Resonators (TFBAR) using all-dielectric SiO2/AlN Bragg reflectors deposited on a high resistivity silicon substrate are considered. SiO2/AlN reflectors withstand the high deposition temperature (>600C) of the BST films opening up possibilities for heterogeneous integration of complex microwave circuits. © 2010 IEEE.
Si-integration
TFBAR
Induced piezoelectric effect
FBAR
Acoustic Bragg reflector ferroelectric
Författare
Andrei Vorobiev
Chalmers, Teknisk fysik, Fysikalisk elektronik
John Berge
Chalmers, Teknisk fysik, Fysikalisk elektronik
Martin Norling
Chalmers, Teknisk fysik, Fysikalisk elektronik
Spartak Gevorgian
Chalmers, Teknisk fysik, Fysikalisk elektronik
2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers
41-44
978-142445458-7 (ISBN)
Ämneskategorier
Elektroteknik och elektronik
DOI
10.1109/SMIC.2010.5422942
ISBN
978-142445458-7