A highly efficient 3.5 GHz inverse class-F GaN HEMT power amplifier
Journal article, 2010

This paper presents the design and implementation of an inverse class-F power amplifier (PA) using a high power gallium nitride high electron mobility transistor (GaN HEMT). For a 3.5 GHz continuous wave signal, the measurement results show state-of-the-art power-added efficiency (PAE) of 78%, a drain efficiency of 82%, a gain of 12 dB, and an output power of 12 W. Moreover, over a 300 MHz bandwidth, the PAE and output power are maintained at 60% and 10 W, respectively. Linearized modulated measurements using 20 MHz bandwidth long-term evolution (LTE) signal with 11.5 dB peak-to-average ratio show that 242 dBc adjacent channel power ratio (ACLR) is achieved, with an average PAE of 30%, 247 dBc ACLR with an average PAE of 40% are obtained when using a WCDMA signal with 6.6 dB peak-to-average ratio (PAR).

Power amplifier

Wideband

High efficiency

GaN HEMT

Inverse-F

Author

Paul Saad

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Christian Fager

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Hossein Mashad Nemati

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Haiying Cao

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Kristoffer Andersson

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

International Journal of Microwave and Wireless Technologies

1759-0787 (ISSN)

Vol. 2 3-4 317-324

Subject Categories

Telecommunications

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1017/S1759078710000395

More information

Created

10/7/2017