Design and Fabrication of Silicon Carbide RF MOSFET
Licentiate thesis, 2005
4H-SiC
Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET)
Silicon Carbide (SiC)
Author
Gudjon Gudjonsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
1652-0769 (ISSN)
High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material
Materials Science Forum,; Vol. 483-485(2005)p. 841-844
Journal article
Enhancement of inversion channel mobility in 4H-SiC MOSFETs using a gate oxide grown in nitrous oxide (N2O)
Materials Science Forum,; Vol. 457-460(2004)p. 1425-1428
Journal article
High field effect mobility in 6H-SiC MOSFETs with gate oxides grown in alumina environment
Materials Science Forum,; Vol. 483-485(2005)p. 837-840
Journal article
High field effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material
IEEE Electron Device Letters,; Vol. 26(2005)p. 96-98
Journal article
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering