Design and Fabrication of Silicon Carbide RF MOSFET
Licentiatavhandling, 2005
4H-SiC
Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET)
Silicon Carbide (SiC)
Författare
Gudjon Gudjonsson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
1652-0769 (ISSN)
High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material
Materials Science Forum,; Vol. 483-485(2005)p. 841-844
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High field effect mobility in 6H-SiC MOSFETs with gate oxides grown in alumina environment
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High field effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material
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Ämneskategorier
Annan elektroteknik och elektronik