Design and Fabrication of Silicon Carbide RF MOSFET
Licentiatavhandling, 2005

4H-SiC

Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET)

Silicon Carbide (SiC)

Författare

Gudjon Gudjonsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

1652-0769 (ISSN)

High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material

Materials Science Forum,; Vol. 483-485(2005)p. 841-844

Artikel i vetenskaplig tidskrift

Enhancement of inversion channel mobility in 4H-SiC MOSFETs using a gate oxide grown in nitrous oxide (N2O)

Materials Science Forum,; Vol. 457-460(2004)p. 1425-1428

Artikel i vetenskaplig tidskrift

High field effect mobility in 6H-SiC MOSFETs with gate oxides grown in alumina environment

Materials Science Forum,; Vol. 483-485(2005)p. 837-840

Artikel i vetenskaplig tidskrift

High field effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

IEEE Electron Device Letters,; Vol. 26(2005)p. 96-98

Artikel i vetenskaplig tidskrift

Ämneskategorier

Annan elektroteknik och elektronik