Temperature distribution in a stack of intrinsic Josephson junctions with their CuO-plane electrodes oriented perpendicular to supporting substrate
Journal article, 2011

We numerically study Joule heating in a THz emitter made of Bi2Sr2CaCu2O{8+δ} (Bi2212) single crystal with its CuO planes oriented perpendicular to supporting substrate. The single crystal is glued to the substrate by a layer of PMMA. The electrical current is applied in the c-axis direction across many intrinsic Josephson junctions (IJJ's) in Bi2212. The calculations show that the internal temperature increases to an acceptable 10–20 K only above the bath temperature for a Joule power density of ~ 10^5 W /cm^3 typical for experiments on THz emission from IJJ's. This makes the suggested geometry promising for boosting the output power of the emitter.

THz radiation

intrinsic Josephson effect


Avgust Yurgens

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

L. N. Bulaevskii

Los Alamos National Laboratory

Superconductor Science and Technology

0953-2048 (ISSN) 1361-6668 (eISSN)

Vol. 24 1 015003-

Subject Categories

Other Engineering and Technologies not elsewhere specified

Condensed Matter Physics



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