Temperature distribution in a stack of intrinsic Josephson junctions with their CuO-plane electrodes oriented perpendicular to supporting substrate

Artikel i vetenskaplig tidskrift, 2011

We numerically study Joule heating in a THz emitter made of Bi2Sr2CaCu2O{8+δ} (Bi2212) single crystal with its CuO planes oriented perpendicular to supporting substrate. The single crystal is glued to the substrate by a layer of PMMA. The electrical current is applied in the c-axis direction across many intrinsic Josephson junctions (IJJ's) in Bi2212. The calculations show that the internal temperature increases to an acceptable 10–20 K only above the bath temperature for a Joule power density of ~ 10^5 W /cm^3 typical for experiments on THz emission from IJJ's. This makes the suggested geometry promising for boosting the output power of the emitter.