Full characterization of a semiconductor laser beam by simultaneous capture of the near- and far-field
Conference poster, 2010

We present a new measurement technique for fully characterizing a semiconductor laser beam. The reflections from both surfaces of a planoconvex lens are used to simultaneously capture the near- and far-field. The optical phase is then retrieved using the Gerchberg-Saxton algorithm with improved numerical operations.

Gerchberg-Saxton

phase retrieval

optically pumped semiconductor disk laser (OP-SDL)

vertical-external-cavity surface-emitting laser (VECSEL)

high-power laser

Author

Carl Borgentun

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Jörgen Bengtsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Conference Digest - IEEE International Semiconductor Laser Conference

08999406 (ISSN)

127-128 5642720

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Telecommunications

Atom and Molecular Physics and Optics

DOI

10.1109/ISLC.2010.5642720

ISBN

9781424456833

More information

Created

10/8/2017