Full characterization of a semiconductor laser beam by simultaneous capture of the near- and far-field
Conference poster, 2010

We present a new measurement technique for fully characterizing a semiconductor laser beam. The reflections from both surfaces of a planoconvex lens are used to simultaneously capture the near- and far-field. The optical phase is then retrieved using the Gerchberg-Saxton algorithm with improved numerical operations.

Gerchberg-Saxton

phase retrieval

optically pumped semiconductor disk laser (OP-SDL)

vertical-external-cavity surface-emitting laser (VECSEL)

high-power laser

Author

Carl Borgentun

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Other publications Research

Jörgen Bengtsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Other publications Research

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Other publications Research

Conference Digest - IEEE International Semiconductor Laser Conference

08999406 (ISSN)

127-128 5642720

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Telecommunications

Atom and Molecular Physics and Optics

DOI

10.1109/ISLC.2010.5642720

Publication data connected to DOI

ISBN

9781424456833

More information

Created

10/8/2017

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