Full characterization of a semiconductor laser beam by simultaneous capture of the near- and far-field
Conference poster, 2010
We present a new measurement technique for fully characterizing a semiconductor laser beam. The reflections from both surfaces of a planoconvex lens are used to simultaneously capture the near- and far-field. The optical phase is then retrieved using the Gerchberg-Saxton algorithm with improved numerical operations.
Gerchberg-Saxton
phase retrieval
optically pumped semiconductor disk laser (OP-SDL)
vertical-external-cavity surface-emitting laser (VECSEL)
high-power laser
Author
Carl Borgentun
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Jörgen Bengtsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Anders Larsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Conference Digest - IEEE International Semiconductor Laser Conference
08999406 (ISSN)
127-128 5642720Areas of Advance
Nanoscience and Nanotechnology (2010-2017)
Subject Categories
Telecommunications
Atom and Molecular Physics and Optics
DOI
10.1109/ISLC.2010.5642720
ISBN
9781424456833