Multiparameter admittance spectroscopy (Invited)
Paper in proceeding, 2010
Multiparameter admittance spectroscopy is described for investigating interface state properties of metal-oxide-semiconductor structures. In the conductance mode of this method, it allows for obtaining three-dimensional or contour plots of conductance data which reveal the mechanisms for capture of charge carriers into the interface states.
Author
Olof Engström
Chalmers, Applied Physics, Physical Electronics
Bahman Raeissi
Chalmers, Applied Physics, Physical Electronics
ECS Transactions
19386737 (ISSN) 19385862 (eISSN)
Vol. 35 3 257-265978-156677822-0 (ISBN)
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1149/1.3481613
ISBN
978-156677822-0