Multiparameter admittance spectroscopy (Invited)
Paper in proceedings, 2010

Multiparameter admittance spectroscopy is described for investigating interface state properties of metal-oxide-semiconductor structures. In the conductance mode of this method, it allows for obtaining three-dimensional or contour plots of conductance data which reveal the mechanisms for capture of charge carriers into the interface states.

Author

Olof Engström

Chalmers, Applied Physics, Physical Electronics

Bahman Raeissi

Chalmers, Applied Physics, Physical Electronics

ECS Transactions

1938-5862 (ISSN) 1938-6737 (eISSN)

Vol. 35 3 257-265

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1149/1.3481613

ISBN

978-156677822-0

More information

Created

10/7/2017