Growth characterization of vertically aligned carbon nanofibers on top of TiN buffer layer for nanoelectromechanical devices
Paper in proceedings, 2010

Initial growth of vertically aligned carbon nanofibers (VACNFs) from Ni catalyst seeds in the range of 40 to 100 nm as fabricated using hole-mask colloidal lithography on top of reactively sputtered TiN is studied. We observe that the initial growth conditions could cause a growth mode transition from base-type to tip-type. We attribute this transition to a change in the crystallographic orientation of the Ni catalyst seeds induced by initial growth conditions. A convenient method to deposit stoichiometric TiN films is also presented.

Titanium nitride

Growth

VACNF

Vertucally aligned carbon nanojiber

Plasma enhanced CVD

Author

Farzan Alavian Ghavanini

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Maria Damian

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Damon Rafieian

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Per Lundgren

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Procedia Engineering, 24th Eurosensor 24th Conference Linz, AUSTRIA, SEP 05-08, 2010

1877-7058 (eISSN)

Vol. 5 1115-1118

Areas of Advance

Transport

Production

Subject Categories

Other Engineering and Technologies

Physical Sciences

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1016/j.proeng.2010.09.306

More information

Latest update

7/22/2019