Growth characterization of vertically aligned carbon nanofibers on top of TiN buffer layer for nanoelectromechanical devices
Paper i proceeding, 2010

Initial growth of vertically aligned carbon nanofibers (VACNFs) from Ni catalyst seeds in the range of 40 to 100 nm as fabricated using hole-mask colloidal lithography on top of reactively sputtered TiN is studied. We observe that the initial growth conditions could cause a growth mode transition from base-type to tip-type. We attribute this transition to a change in the crystallographic orientation of the Ni catalyst seeds induced by initial growth conditions. A convenient method to deposit stoichiometric TiN films is also presented.

Plasma enhanced CVD

VACNF

Titanium nitride

Growth

Vertucally aligned carbon nanojiber

Författare

Farzan Alavian Ghavanini

Chalmers, Mikroteknologi och nanovetenskap (MC2), Elektronikmaterial och system

Maria Damian

Chalmers University of Technology

Damon Rafieian

Chalmers University of Technology

Per Lundgren

Chalmers, Mikroteknologi och nanovetenskap (MC2), Elektronikmaterial och system

Procedia Engineering, 24th Eurosensor 24th Conference Linz, AUSTRIA, SEP 05-08, 2010

1877-7058 (eISSN)

Vol. 5 1115-1118

Styrkeområden

Transport

Produktion

Ämneskategorier

Annan teknik

Fysik

Elektroteknik och elektronik

DOI

10.1016/j.proeng.2010.09.306