Pseudogap behavior in Pr0.5Sr0.5MnO3: A photoemission study
Journal article, 2011

The valence band electronic structure of Pr0.5Sr0.5MnO3 has been investigated across its paramagnetic metallic (PMM)-ferromagnetic metallic (FMM)-antiferromagnetic insulator (AFMI) transition. Using surface sensitive high resolution photoemission we have conclusively demonstrated the presence of a pseudogap of magnitude 80 meV in the near Fermi level electronic spectrum in the PMM and FMM phases and finite intensity at the Fermi level in the charge ordering (CO)-AFMI phase. The pseudogap behavior is explained in terms of the strong electron-phonon interaction and the formation of Jahn Teller UT) polarons, indicating the charge localizations. The finite intensity at the Fermi level in the insulating phase showed a lack of charge ordering in the surface of the Pr0.5Sr0.5MnO3 samples.

Colossal magnetoresistance


Electronic structure


Prabir Pal

M. K. Dalai

Intikhab Ulfat

Chalmers, Applied Physics, Solid State Physics

Surface Science

0039-6028 (ISSN)

Vol. 605 9-10 875-877

Subject Categories

Physical Sciences

Condensed Matter Physics

Areas of Advance

Materials Science



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