Pseudogap behavior in Pr0.5Sr0.5MnO3: A photoemission study
Artikel i vetenskaplig tidskrift, 2011

The valence band electronic structure of Pr0.5Sr0.5MnO3 has been investigated across its paramagnetic metallic (PMM)-ferromagnetic metallic (FMM)-antiferromagnetic insulator (AFMI) transition. Using surface sensitive high resolution photoemission we have conclusively demonstrated the presence of a pseudogap of magnitude 80 meV in the near Fermi level electronic spectrum in the PMM and FMM phases and finite intensity at the Fermi level in the charge ordering (CO)-AFMI phase. The pseudogap behavior is explained in terms of the strong electron-phonon interaction and the formation of Jahn Teller UT) polarons, indicating the charge localizations. The finite intensity at the Fermi level in the insulating phase showed a lack of charge ordering in the surface of the Pr0.5Sr0.5MnO3 samples.

Colossal magnetoresistance

Photoemission

Electronic structure

Författare

Prabir Pal

M. K. Dalai

Intikhab Ulfat

Chalmers, Teknisk fysik, Fasta tillståndets fysik

Surface Science

0039-6028 (ISSN)

Vol. 605 875-877

Ämneskategorier

Fysik

Den kondenserade materiens fysik

Styrkeområden

Materialvetenskap

DOI

10.1016/j.susc.2011.01.031