High Speed Vertical Cavity Surface Emitting Lasers for Short Reach Communication
Doctoral thesis, 2011
high speed modulation
GaAs
Semiconductor laser
InGaAs
vertical cavity surface emitting laser (VCSEL)
laser dynamics
fabrication
Author
Petter Westbergh
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Large aperture 850 nm VCSELs operating at bit rates up to 25 Gbit/s
Electronics Letters,;Vol. 44(2008)p. 907-908
Journal article
High speed, low current density 850 nm VCSELs
IEEE Journal of Selected Topics in Quantum Electronics,;Vol. 15(2009)p. 694-703
Journal article
32 Gbit/s multimode fibre transmission using high-speed, low current density 850 nm VCSEL
Electronics Letters,;Vol. 45(2009)p. 366 - 368
Journal article
Speed enhancement of VCSELs by photon lifetime reduction
Electronics Letters,;Vol. 46(2010)p. 938-940
Journal article
Active Region Design for High-Speed 850-nm VCSELs
IEEE Journal of Quantum Electronics,;Vol. 46(2010)p. 506-512
Journal article
Impedance characteristics and parasitic speed limitations of high speed 850 nm VCSELs
IEEE Photonics Technology Letters,;Vol. 21(2009)p. 1840-
Journal article
40 Gbit/s error-free operation of oxide-confined 850 nm VCSEL
Electronics Letters,;Vol. 46(2010)p. 1014-1015
Journal article
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology (SO 2010-2017, EI 2018-)
Subject Categories
Telecommunications
ISBN
978-91-7385-527-3
Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology: MC2-190
Doktorsavhandlingar vid Chalmers tekniska högskola. Ny serie: 3208
Room A423 (Kollektorn) at the Department of Microtechnology and Nanoscience -- MC2
Opponent: Prof. Kevin L. Lear, Electrical and Computer Engineering, Colorado State University, Fort Collins, USA