High Speed Vertical Cavity Surface Emitting Lasers for Short Reach Communication
Doktorsavhandling, 2011
high speed modulation
GaAs
Semiconductor laser
InGaAs
vertical cavity surface emitting laser (VCSEL)
laser dynamics
fabrication
Författare
Petter Westbergh
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Large aperture 850 nm VCSELs operating at bit rates up to 25 Gbit/s
Electronics Letters,;Vol. 44(2008)p. 907-908
Artikel i vetenskaplig tidskrift
High speed, low current density 850 nm VCSELs
IEEE Journal of Selected Topics in Quantum Electronics,;Vol. 15(2009)p. 694-703
Artikel i vetenskaplig tidskrift
32 Gbit/s multimode fibre transmission using high-speed, low current density 850 nm VCSEL
Electronics Letters,;Vol. 45(2009)p. 366 - 368
Artikel i vetenskaplig tidskrift
Speed enhancement of VCSELs by photon lifetime reduction
Electronics Letters,;Vol. 46(2010)p. 938-940
Artikel i vetenskaplig tidskrift
Active Region Design for High-Speed 850-nm VCSELs
IEEE Journal of Quantum Electronics,;Vol. 46(2010)p. 506-512
Artikel i vetenskaplig tidskrift
Impedance characteristics and parasitic speed limitations of high speed 850 nm VCSELs
IEEE Photonics Technology Letters,;Vol. 21(2009)p. 1840-
Artikel i vetenskaplig tidskrift
40 Gbit/s error-free operation of oxide-confined 850 nm VCSEL
Electronics Letters,;Vol. 46(2010)p. 1014-1015
Artikel i vetenskaplig tidskrift
Styrkeområden
Informations- och kommunikationsteknik
Nanovetenskap och nanoteknik (SO 2010-2017, EI 2018-)
Ämneskategorier
Telekommunikation
ISBN
978-91-7385-527-3
Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology: MC2-190
Doktorsavhandlingar vid Chalmers tekniska högskola. Ny serie: 3208
Room A423 (Kollektorn) at the Department of Microtechnology and Nanoscience -- MC2
Opponent: Prof. Kevin L. Lear, Electrical and Computer Engineering, Colorado State University, Fort Collins, USA