Optimized transport properties of LaAlO3/SrTiO3 heterointerfaces by variation of pulsed laser fluence
Journal article, 2011
We show the influence of pulsed laser deposition fluence on the transport properties of the LaAlO(3)/SrTiO(3) (LAO/STO) heterointerface. Structural characterization by x-ray diffraction and medium energy ion spectrometry enables us to deduce that the electronic behaviour is extremely sensitive to the stoichiometry of the LAO layer as well as the structural quality of the STO surface. An optimum balance of these two quantities is demonstrated for an intermediate laser fluence.
interfaces
Author
F. Schoofs
University of Cambridge
T. Fix
University of Cambridge
Alexei Kalaboukhov
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Dag Winkler
Chalmers, Microtechnology and Nanoscience (MC2)
Iouri Boikov
Russian Academy of Sciences
I.T. Serenkov
Russian Academy of Sciences
V.I. Sakharov
Russian Academy of Sciences
Tord Claeson
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
L. MacManus-Driscoll
University of Cambridge
M. G. Blamire
University of Cambridge
Journal of Physics Condensed Matter
0953-8984 (ISSN) 1361-648X (eISSN)
Vol. 23 30 305002Subject Categories
Physical Sciences
DOI
10.1088/0953-8984/23/30/305002