Optimized transport properties of LaAlO3/SrTiO3 heterointerfaces by variation of pulsed laser fluence
Artikel i vetenskaplig tidskrift, 2011

We show the influence of pulsed laser deposition fluence on the transport properties of the LaAlO(3)/SrTiO(3) (LAO/STO) heterointerface. Structural characterization by x-ray diffraction and medium energy ion spectrometry enables us to deduce that the electronic behaviour is extremely sensitive to the stoichiometry of the LAO layer as well as the structural quality of the STO surface. An optimum balance of these two quantities is demonstrated for an intermediate laser fluence.

interfaces

Författare

F. Schoofs

University of Cambridge

T. Fix

University of Cambridge

Alexei Kalaboukhov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Dag Winkler

Chalmers, Mikroteknologi och nanovetenskap (MC2)

Iouri Boikov

Russian Academy of Sciences

I.T. Serenkov

Russian Academy of Sciences

V.I. Sakharov

Russian Academy of Sciences

Tord Claeson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

L. MacManus-Driscoll

University of Cambridge

M. G. Blamire

University of Cambridge

Journal of Physics Condensed Matter

0953-8984 (ISSN)

Vol. 23 30 305002

Ämneskategorier

Fysik

DOI

10.1088/0953-8984/23/30/305002