Highly efficient GaN-HEMT power amplifiers at 3.5 GHz and 5.5 GHz
Paper in proceedings, 2011

This paper reports the design, implementation, and experimental results of two high efficiency GaN-HEMT power amplifiers (PAs) at 3.5 GHz and 5.5 GHz. A bare-die approach is used to eliminate package parasitics in conjunction with an in-house transistor model that enables investigation of the transistor intrinsic waveforms. With this as a basis, harmonic source-pull/load-pull simulations have been used to design and implement two state-of-the-art highly efficient harmonically tuned PAs. For the 3.5-GHz PA, large-signal measurement results show a PAE of 80%, a power gain of 15.5 dB, and an output power of 7 W, while for the 5.5-GHz PA, 5.6 W output power, 12.5 dB power gain, and 70% PAE are achieved.

harmonic termination

power-added efficiency (PAE)

gallium nitride (GaN)

high electron mobility transistor (HEMT)

power amplifier (PA)

Author

Paul Saad

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Hossein Mashad Nemati

GigaHertz Centre

Kristoffer Andersson

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Christian Fager

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

2011 IEEE 12th Annual Wireless and Microwave Technology Conference, WAMICON 2011

5872865

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/WAMICON.2011.5872865

ISBN

978-161284081-9

More information

Created

10/7/2017