Impedance of Hot-Electron Bolometer Mixers at Terahertz Frequencies
Journal article, 2011

This paper discusses the current distribution in thin-film devices, especially in a hot-electron bolometer (HEB) mixer at terahertz frequencies, and the consequences of different current distributions on the device impedance. We first present an approximate analytical model from which we derive a proposed rule of thumb for deciding when the film is thin enough to support a current distribution that is uniform in the transverse direction. We then verify this rule by performing electromagnetic simulations. Our conclusion is that the current distribution in thin films with a relatively high DC resistivity and small film thickness with respect to the skin depth is essentially uniform up to 8 THz. These results are crucial, e.g., for understanding radiation coupling between an HEB and an antenna and indispensable when analyzing detectors and receivers based on bolometric properties of thin films.

terahertz

thin-film devices

Electromagnetic simulations

low-noise mixer receivers

hot-electron bolometers (HEBs)

Author

Erik Kollberg

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Sigfrid Yngvesson

University of Massachusetts

Yuan Ren

Delft University of Technology

Wen Chang

Chinese Academy of Sciences

Pourya Khosropanah

Netherlands Institute for Space Research (SRON)

Jian-Rong Gao

Delft University of Technology

Netherlands Institute for Space Research (SRON)

IEEE Transactions on Terahertz Science and Technology

2156-342X (ISSN)

Vol. 1 2 383-389 6017152

Areas of Advance

Information and Communication Technology

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/TTHZ.2011.2163550

More information

Latest update

10/2/2018