Impedance of Hot-Electron Bolometer Mixers at Terahertz Frequencies
Artikel i vetenskaplig tidskrift, 2011

This paper discusses the current distribution in thin-film devices, especially in a hot-electron bolometer (HEB) mixer at terahertz frequencies, and the consequences of different current distributions on the device impedance. We first present an approximate analytical model from which we derive a proposed rule of thumb for deciding when the film is thin enough to support a current distribution that is uniform in the transverse direction. We then verify this rule by performing electromagnetic simulations. Our conclusion is that the current distribution in thin films with a relatively high DC resistivity and small film thickness with respect to the skin depth is essentially uniform up to 8 THz. These results are crucial, e.g., for understanding radiation coupling between an HEB and an antenna and indispensable when analyzing detectors and receivers based on bolometric properties of thin films.

Electromagnetic simulations


hot-electron bolometers (HEBs)

low-noise mixer receivers

thin-film devices


Erik Kollberg

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Sigfrid Yngvesson

University of Massachusetts

Yuan Ren

Technische Universiteit Delft

Wen Chang

Purple Mountain Observatory Chinese Academy of Sciences

Pourya Khosropanah

Netherlands Institute for Space Research (SRON)

Jian-Rong Gao

Technische Universiteit Delft

Netherlands Institute for Space Research (SRON)

IEEE Transactions on Terahertz Science and Technology

2156-342X (ISSN)

Vol. 1 383-389 6017152


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Annan elektroteknik och elektronik