Impedance of Hot-Electron Bolometer Mixers at Terahertz Frequencies
Artikel i vetenskaplig tidskrift, 2011

This paper discusses the current distribution in thin-film devices, especially in a hot-electron bolometer (HEB) mixer at terahertz frequencies, and the consequences of different current distributions on the device impedance. We first present an approximate analytical model from which we derive a proposed rule of thumb for deciding when the film is thin enough to support a current distribution that is uniform in the transverse direction. We then verify this rule by performing electromagnetic simulations. Our conclusion is that the current distribution in thin films with a relatively high DC resistivity and small film thickness with respect to the skin depth is essentially uniform up to 8 THz. These results are crucial, e.g., for understanding radiation coupling between an HEB and an antenna and indispensable when analyzing detectors and receivers based on bolometric properties of thin films.


thin-film devices

Electromagnetic simulations

low-noise mixer receivers

hot-electron bolometers (HEBs)


Erik Kollberg

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Sigfrid Yngvesson

University of Massachusetts

Yuan Ren

TU Delft

Wen Chang

Chinese Academy of Sciences

Pourya Khosropanah

Netherlands Institute for Space Research (SRON)

Jian-Rong Gao

TU Delft

Netherlands Institute for Space Research (SRON)

IEEE Transactions on Terahertz Science and Technology

2156-342X (ISSN) 21563446 (eISSN)

Vol. 1 2 383-389 6017152


Informations- och kommunikationsteknik


Annan elektroteknik och elektronik



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