Andreev tunneling in charge pumping with SINIS turnstiles
Journal article, 2011
We present measurements on hybrid single-electron turnstiles with superconducting leads contacting a normal island (SINIS). We observe Andreev tunneling of electrons influencing the current plateau characteristics of the turnstiles under radio-frequency pumping. The data is well accounted for by numerical simulations. We verify the dependence of the Andreev tunneling rate on the turnstile's charging energy. Increasing the charging energy effectively suppresses the Andreev current.
transport
coulomb-blockade
island
single-electron transistor
junctions
oscillations
reflection
Author
Thomas Aref
Aalto University
Centre for Metrology and Accreditation Finland
V. F. Maisi
Centre for Metrology and Accreditation Finland
Martin Gustafsson
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Per Delsing
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
J. Pekola
Aalto University
Europhysics Letters
0295-5075 (ISSN) 1286-4854 (eISSN)
Vol. 96 3 37008Subject Categories
Physical Sciences
DOI
10.1209/0295-5075/96/37008