Andreev tunneling in charge pumping with SINIS turnstiles
Artikel i vetenskaplig tidskrift, 2011

We present measurements on hybrid single-electron turnstiles with superconducting leads contacting a normal island (SINIS). We observe Andreev tunneling of electrons influencing the current plateau characteristics of the turnstiles under radio-frequency pumping. The data is well accounted for by numerical simulations. We verify the dependence of the Andreev tunneling rate on the turnstile's charging energy. Increasing the charging energy effectively suppresses the Andreev current.

transport

coulomb-blockade

island

single-electron transistor

junctions

oscillations

reflection

Författare

Thomas Aref

Aalto-Yliopisto

Centre for Metrology and Accreditation Finland

V. F. Maisi

Centre for Metrology and Accreditation Finland

Martin Gustafsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Per Delsing

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

J. Pekola

Aalto-Yliopisto

Europhysics Letters

0295-5075 (ISSN) 1286-4854 (eISSN)

Vol. 96 3

Ämneskategorier

Fysik

DOI

10.1209/0295-5075/96/37008