Precision comparison of the quantum Hall effect in graphene and gallium arsenide
Journal article, 2012

The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well-known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantized resistance values within the relative standard uncertainty of our measurement of 8.7 x 10(-11). The result places new tighter limits on any possible correction terms to the simple relation R-K = h/e(2), and also demonstrates that epitaxial graphene samples are suitable for application as electrical resistance standards of the highest metrological quality. We discuss the characterization of the graphene sample used in this experiment and present the details of the cryogenic current comparator bridge and associated uncertainty budget.

Author

Tjbm Janssen

National Physical Laboratory (NPL)

J. M. Williams

National Physical Laboratory (NPL)

N. E. Fletcher

BIPM Bureau International des Poids et Mesures

R. Goebel

BIPM Bureau International des Poids et Mesures

A.Y. Tzalenchuk

National Physical Laboratory (NPL)

R. Yakimova

Linköping University

Samuel Lara Avila

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Sergey Kubatkin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

V. I. Fal'ko

Lancaster University

Metrologia

0026-1394 (ISSN)

Vol. 49 3 294-306

Subject Categories

Physical Sciences

DOI

10.1088/0026-1394/49/3/294

More information

Latest update

5/29/2018