Modeling of Long Term Memory Effects in RF Power Amplifiers with Dynamic Parameters
Paper in proceedings, 2012

This paper presents a new radio frequency power amplifier behavioral model that is capable of modeling long term memory effects. The proposed model is derived by assuming linear dependence of the parameters of a conventional model to a long term memory parameter, which enables the model to better track the signal-induced changes of the power amplifier electrical behavior. The model is experimentally tested and shows a 2-3 dB improvement compared to common behavioral models.

Author

Ali Soltani Tehrani

Chalmers, Signals and Systems, Communication and Antenna Systems, Communication Systems

GigaHertz Centre

Thomas Eriksson

Chalmers, Signals and Systems, Communication and Antenna Systems, Communication Systems

GigaHertz Centre

Christian Fager

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

Art. no. 6259496- 6259496

Areas of Advance

Information and Communication Technology

Subject Categories

Telecommunications

Signal Processing

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/MWSYM.2012.6259496

ISBN

978-146731087-1

More information

Created

10/7/2017