Adhesion layer-bottom electrode interaction during BaxSr1−xTiO3 growth as a limiting factor for device performance
Journal article, 2012
Changes in bottom electrode morphology and adhesion layer composition upon deposition of BaxSr1-xTiO3 (BSTO) at elevated temperatures have been found, which have a negative impact on acoustic wave resonator device performance. The difference between nominal and actual adhesion layer composition are explained by grain boundary diffusion of Ti or W and their oxidation by in-diffusing oxygen, which leads to an increased interface roughness between the Pt bottom electrode and the BSTO. It is shown, that room-temperature deposited TiO2 diffusion barriers fail to protect against Ti oxidation and diffusion. Also W adhesion layers are prone to this phenomenon, which limits their ability to act as high temperature resistant adhesion layers for bottom electrodes for ferroelectric thin films.
interface roughness
sputter deposition
barium compounds
tungsten
acoustic resonators
oxidation
strontium compounds
grain boundary diffusion
ferroelectric thin films
adhesion
diffusion barriers
platinum
Author
Markus Löffler
Chalmers, Applied Physics, Microscopy and Microanalysis
Andrei Vorobiev
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Lunjie Zeng
Chalmers, Applied Physics, Eva Olsson Group
Chalmers, Applied Physics, Microscopy and Microanalysis
Spartak Gevorgian
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Eva Olsson
Chalmers, Applied Physics, Microscopy and Microanalysis
Chalmers, Applied Physics, Eva Olsson Group
Journal of Applied Physics
0021-8979 (ISSN) 1089-7550 (eISSN)
Vol. 111 12 Art. no. 124514- 124514Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology (SO 2010-2017, EI 2018-)
Materials Science
Subject Categories
Ceramics
Other Materials Engineering
Nano Technology
Signal Processing
Other Electrical Engineering, Electronic Engineering, Information Engineering
Infrastructure
Nanofabrication Laboratory
DOI
10.1063/1.4730781