Adhesion layer-bottom electrode interaction during BaxSr1−xTiO3 growth as a limiting factor for device performance
Journal article, 2012

Changes in bottom electrode morphology and adhesion layer composition upon deposition of BaxSr1-xTiO3 (BSTO) at elevated temperatures have been found, which have a negative impact on acoustic wave resonator device performance. The difference between nominal and actual adhesion layer composition are explained by grain boundary diffusion of Ti or W and their oxidation by in-diffusing oxygen, which leads to an increased interface roughness between the Pt bottom electrode and the BSTO. It is shown, that room-temperature deposited TiO2 diffusion barriers fail to protect against Ti oxidation and diffusion. Also W adhesion layers are prone to this phenomenon, which limits their ability to act as high temperature resistant adhesion layers for bottom electrodes for ferroelectric thin films.

interface roughness

sputter deposition

barium compounds

tungsten

acoustic resonators

oxidation

strontium compounds

grain boundary diffusion

ferroelectric thin films

adhesion

diffusion barriers

platinum

Author

Markus Löffler

Chalmers, Applied Physics, Microscopy and Microanalysis

Andrei Vorobiev

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Lunjie Zeng

Chalmers, Applied Physics, Eva Olsson Group

Chalmers, Applied Physics, Microscopy and Microanalysis

Spartak Gevorgian

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Eva Olsson

Chalmers, Applied Physics, Microscopy and Microanalysis

Chalmers, Applied Physics, Eva Olsson Group

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 111 12 Art. no. 124514- 124514

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Materials Science

Subject Categories

Ceramics

Other Materials Engineering

Nano Technology

Signal Processing

Other Electrical Engineering, Electronic Engineering, Information Engineering

Infrastructure

Nanofabrication Laboratory

DOI

10.1063/1.4730781

More information

Created

10/7/2017