Adhesion layer-bottom electrode interaction during BaxSr1−xTiO3 growth as a limiting factor for device performance
Artikel i vetenskaplig tidskrift, 2012
Changes in bottom electrode morphology and adhesion layer composition upon deposition of BaxSr1-xTiO3 (BSTO) at elevated temperatures have been found, which have a negative impact on acoustic wave resonator device performance. The difference between nominal and actual adhesion layer composition are explained by grain boundary diffusion of Ti or W and their oxidation by in-diffusing oxygen, which leads to an increased interface roughness between the Pt bottom electrode and the BSTO. It is shown, that room-temperature deposited TiO2 diffusion barriers fail to protect against Ti oxidation and diffusion. Also W adhesion layers are prone to this phenomenon, which limits their ability to act as high temperature resistant adhesion layers for bottom electrodes for ferroelectric thin films.
interface roughness
sputter deposition
barium compounds
tungsten
acoustic resonators
oxidation
strontium compounds
grain boundary diffusion
ferroelectric thin films
adhesion
diffusion barriers
platinum
Författare
Markus Löffler
Chalmers, Teknisk fysik, Mikroskopi och mikroanalys
Andrei Vorobiev
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Lunjie Zeng
Chalmers, Teknisk fysik, Eva Olsson Group
Chalmers, Teknisk fysik, Mikroskopi och mikroanalys
Spartak Gevorgian
Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik
Eva Olsson
Chalmers, Teknisk fysik, Mikroskopi och mikroanalys
Chalmers, Teknisk fysik, Eva Olsson Group
Journal of Applied Physics
0021-8979 (ISSN) 1089-7550 (eISSN)
Vol. 111 12 Art. no. 124514- 124514Styrkeområden
Informations- och kommunikationsteknik
Nanovetenskap och nanoteknik (SO 2010-2017, EI 2018-)
Materialvetenskap
Ämneskategorier
Keramteknik
Annan materialteknik
Nanoteknik
Signalbehandling
Annan elektroteknik och elektronik
Infrastruktur
Nanotekniklaboratoriet
DOI
10.1063/1.4730781