Adhesion layer-bottom electrode interaction during BaxSr1−xTiO3 growth as a limiting factor for device performance
Artikel i vetenskaplig tidskrift, 2012

Changes in bottom electrode morphology and adhesion layer composition upon deposition of BaxSr1-xTiO3 (BSTO) at elevated temperatures have been found, which have a negative impact on acoustic wave resonator device performance. The difference between nominal and actual adhesion layer composition are explained by grain boundary diffusion of Ti or W and their oxidation by in-diffusing oxygen, which leads to an increased interface roughness between the Pt bottom electrode and the BSTO. It is shown, that room-temperature deposited TiO2 diffusion barriers fail to protect against Ti oxidation and diffusion. Also W adhesion layers are prone to this phenomenon, which limits their ability to act as high temperature resistant adhesion layers for bottom electrodes for ferroelectric thin films.

interface roughness

sputter deposition

barium compounds

tungsten

acoustic resonators

oxidation

strontium compounds

grain boundary diffusion

ferroelectric thin films

adhesion

diffusion barriers

platinum

Författare

Markus Löffler

Chalmers, Teknisk fysik, Mikroskopi och mikroanalys

Andrei Vorobiev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Lunjie Zeng

Chalmers, Teknisk fysik, Eva Olsson Group

Chalmers, Teknisk fysik, Mikroskopi och mikroanalys

Spartak Gevorgian

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Eva Olsson

Chalmers, Teknisk fysik, Mikroskopi och mikroanalys

Chalmers, Teknisk fysik, Eva Olsson Group

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 111 Art. no. 124514- 124514

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Materialvetenskap

Ämneskategorier

Keramteknik

Annan materialteknik

Nanoteknik

Signalbehandling

Annan elektroteknik och elektronik

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1063/1.4730781