Investigation of gate edge effects on interface traps densities in 3C-SiC MOS capacitors
Journal article, 2012


T. Gutt

T. Malakowski

H. M. Przewlocki

Olof Engström

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

M. Bakowski

R. Esteve

Material Science and Engineering B

2161-6221 (ISSN)

Vol. 177 1327-

Subject Categories

Materials Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

Areas of Advance

Materials Science

More information