A W-and G-band MMIC source using InP HBT technology
Paper in proceeding, 2012
A frequency doubler/quadrupler for W-and G-band application is designed and fabricated utilizing an InP 250nm heterojunction bipolar transistor process. The multiplier is integrated with balanced V-band VCO. The VCO can be tuned between 57 to 61 GHz with average output power of 6 dBm and phase noise lower than 95 dBc/Hz at 1 MHz offset frequency. The circuit VCO plus multiplier can be used as a source with output power of 2dBm in 113-118 GHz bandwidth and 4dBm from 212 to 228 GHz.
Voltage controlled oscillator
Heterojunction bipolar transistor
Differential doubler
Author
Rumen Kozhuharov
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
M. Bao
Ericsson
Marcus Gavell
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE MTT-S International Microwave Symposium Digest
0149645X (ISSN)
1 - 3 6258435978-1-4673-1087-1 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/MWSYM.2012.6258435
ISBN
978-1-4673-1087-1