A W-and G-band MMIC source using InP HBT technology
Paper i proceeding, 2012

A frequency doubler/quadrupler for W-and G-band application is designed and fabricated utilizing an InP 250nm heterojunction bipolar transistor process. The multiplier is integrated with balanced V-band VCO. The VCO can be tuned between 57 to 61 GHz with average output power of 6 dBm and phase noise lower than 95 dBc/Hz at 1 MHz offset frequency. The circuit VCO plus multiplier can be used as a source with output power of 2dBm in 113-118 GHz bandwidth and 4dBm from 212 to 228 GHz.

Differential doubler

Voltage controlled oscillator

Heterojunction bipolar transistor

Författare

Rumen Kozhuharov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

M. Bao

Ericsson Sweden

Marcus Gavell

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

1 - 3 6258435

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/MWSYM.2012.6258435

ISBN

978-1-4673-1087-1