The influence of gate material, SiO2 fabrication method and gate edge effect on interface trap density in 3C-SiC MOS capcitors
Journal article, 2012

Author

T. Gutt

T. Malachowski

H. M. Prewlocki

Olof Engström

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

M. Bakowski

R. Esteve

Materials Science Forum

0255-5476 (ISSN)

Vol. 117 109-

Subject Categories

Other Materials Engineering

Areas of Advance

Materials Science

More information

Created

10/8/2017