Improved Tunable Performance of high Q-factor BaxSr1-xTiO3 Film Bulk Acoustic Wave Resonators

Andrei Vorobiev; Spartak Gevorgian

Improved Tunable Performance of high Q-factor BaxSr1-xTiO3 Film Bulk Acoustic Wave Resonators
Paper in proceeding, 2012

Improved tunable performance of high Q-factor BaxSr1-xTiO3 film bulk acoustic wave resonators (FBARs) achieved by varying Ba concentration. The Ba0.5Sr0.5TiO3 FBARs reveal tunability of series resonance frequency up to 2.4%, electromechanical coupling coefficient up to 7.5% and rather high figure of merit, Qf1300 GHz. Correlations between the measured electroacoustic parameters are analyzed using the theory of dc bias induced piezoelectric effect in paraelectric phase ferroelectrics.

tunable FBAR

microwave film bulk acoustic resonator

Ferroelectric

multiferroic

Author

Andrei Vorobiev

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Other publications Research

Spartak Gevorgian

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Other publications Research

15th European Microwave Week - Space for Microwaves Conference Proceedings

1-3
978-2-87487-028-6 (ISBN)

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (SO 2010-2017, EI 2018-)

Materials Science

Driving Forces

Sustainable development

Subject Categories

Physical Sciences

Electrical Engineering, Electronic Engineering, Information Engineering

Roots

Basic sciences

Infrastructure

Nanofabrication Laboratory

ISBN

978-2-87487-028-6

More information

Created

10/8/2017

Improved Tunable Performance of high Q-factor BaxSr1-xTiO3 Film Bulk Acoustic Wave Resonators Paper in proceeding, 2012