The influence of process-induced defects on electrical properties of silicon junctions
Doctoral thesis, 1992
tunneling
silicon emitter junctions
discrete conductance fluctuation
shallow doping
deep-level transient spectroscopy
Author
Gert I. Andersson
Department of Solid State Electronics
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
ISBN
91-7032-675-4
Technical report - School of Electrical and Computer Engineering, Chalmers University of Technology, Göteborg, Sweden: 226
Doktorsavhandlingar vid Chalmers tekniska högskola. Ny serie: 844