The influence of process-induced defects on electrical properties of silicon junctions
Doctoral thesis, 1992

tunneling

silicon emitter junctions

discrete conductance fluctuation

shallow doping

deep-level transient spectroscopy

Author

Gert I. Andersson

Department of Solid State Electronics

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

91-7032-675-4

Technical report - School of Electrical and Computer Engineering, Chalmers University of Technology, Göteborg, Sweden: 226

Doktorsavhandlingar vid Chalmers tekniska högskola. Ny serie: 844

More information

Created

10/8/2017