Response to "Comment on a model for internal photoemission at high-k oxide silicon energy barriers, J. Appl. Phys. 112, 064115 (2012)"

Olof Engström

doi:10.1063/1.4802675

Response to "Comment on a model for internal photoemission at high-k oxide silicon energy barriers, J. Appl. Phys. 112, 064115 (2012)"
Journal article, 2013

Author

Olof Engström

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Other publications Research

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 113 16 166102-

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Condensed Matter Physics

DOI

10.1063/1.4802675

Publication data connected to DOI

More information

Created

10/7/2017

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Response to "Comment on a model for internal photoemission at high-k oxide silicon energy barriers, J. Appl. Phys. 112, 064115 (2012)" Journal article, 2013