Nanoscale interaction layer at the interface between Al films and SiO2 substrates of Al/AlOx/Al Josephson tunnel junctions
Journal article, 2013

An interaction layer is found at the Al/SiO2 interface in Al/AlOx/Al tunnel junctions grown on SiO2 substrates. The amorphous intermixing layer has an average thickness of about 5 nm. We present the detailed structure of this interfacial layer as determined by transmission electron microscopy. The layer contains alumina with aluminum being octahedrally coordinated according to electron energy loss spectroscopy analysis rather than tetrahedrally coordinated, where the latter coordination is the most common type in amorphous alumina. Depth profiles of the Al-O and Si-O bonding characteristics were also investigated using energy loss near edge structure.

Author

Lunjie Zeng

Chalmers, Applied Physics, Eva Olsson Group

Tine Greibe

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Samira Mousavi Nik

Chalmers, Applied Physics, Eva Olsson Group

Christopher Wilson

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Per Delsing

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Eva Olsson

Chalmers, Applied Physics, Eva Olsson Group

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 113 14 Art. no. 143905-

Subject Categories

Other Engineering and Technologies

DOI

10.1063/1.4801798

More information

Created

10/7/2017